FFPF15S60S — STEALTH? II Diode
?2007 Fairchild Semiconductor Corporation
FFPF15S60S Rev. C1
www.fairchildsemi.com
1
November 2013
FFPF15S60S
15 A, 600 V, STEALTHTM
II Diode
Features
? Stealth Recovery Trr
= 35 ns (@ I
F
= 15 A)
? Max Forward Voltage, VF
= 2.6 V (@ T
C
= 25°C)
? 600 V Reverse Voltage and High Reliability
? Improved dv/dt Capability
? RoHS Compliant
Applications
? General Purpose
? SMPS, Power Switching Circuits
? Boost Diode in Continuous Mode Power Factor Corrections
Description
The FFPF15S60S is STEALTHTM
II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Absolute Maximum Ratings
TC = 25oC unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Unit
VRRM
Peak Repetitive Reverse Voltage 600 V
VRWM
Working Peak Reverse Voltage 600 V
VR
DC Blocking Voltage 600 V
IF(AV)
Average Rectified Forward Current @ TC
= 52
oC 15 A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
150 A
TJ, TSTG
Operating and Storage Temperature Range -65 to +150
oC
Symbol Parameter Max. Unit
R?JC
Maximum Thermal Resistance, Junction to Case 4.6
oC/W
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFPF15S60STU FFPF15S60S TO-220F-2L Tube N/A N/A
50
1. Cathode 2. Anode
1. Cathode 2. Anode
TO-220F-2L
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